MMN600DB015B
MMN600DB015B is 150V 600A N-ch Power MOSFET manufactured by MacMic.
FEATURES
- RDS(ON).typ=1.8mΩ@VGS=10V
- 175℃ junction temperature
- Low Gate Charge Minimize Switching Loss
- Fast Recovery body Diode
- 20K Ω Gate Protected Resistance Inside
APPLICATIONS
- High efficiency DC/DC Converters
- ISG EV Products
- UPS inverter
Type MMN600DB015B
VDS 150V
ID 600A
RDS(ON).max TJ=25°C 2.1mΩ
TJmax 175℃
Marking MMN600DB015B
Package NDB
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VDSS VGSS
Drain Source Voltage Gate Source Voltage
TJ=25℃
Continuous Drain Current
TC=25℃ TC=100℃
Pulsed Drain Current at VGS=10V
Maximum Power Dissipation
Limited by TJmax
T C =25°C unless otherwise specified
Values
Unit
150 V
±20
THERMAL AND MODULE CHARACTERISTICS
Symbol
Parameter/Test...
