MMN668A010U1 Description
May 2016 MMN668A010U1 100V 668A N-ch Power MOSFET Module Preliminary RoHS pliant PRODUCT.
MMN668A010U1 Key Features
- RDS(ON).typ=1.1mΩ@VGS=10V
- 175℃operating temperature
- Low Gate Charge Minimize Switching Loss
- Fast Recovery body Diode
- 20K Ω Gate Protected Resistance Inside
- Inside the module,each MOSFET chip has a gate resistance:2.2Ω