MMN668A010U1
MMN668A010U1 is MOSFET manufactured by MacMic.
FEATURES
- RDS(ON).typ=1.1mΩ@VGS=10V
- 175℃operating temperature
- Low Gate Charge Minimize Switching Loss
- Fast Recovery body Diode
- 20K Ω Gate Protected Resistance Inside
- Inside the module,each MOSFET chip has a gate resistance:2.2Ω
APPLICATIONS
- High efficiency DC/DC Converters
- ISG EV Products
- UPS inverter
Type MMN668A010U1
VDS 100V
ID 668A
RDS(ON).max TJ=25℃ 1.4mΩ
TJmax 175℃
Marking MMN668A010U1
Package NA
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain
- Source Voltage
TJ=25℃
VGSS Gate
- Source Voltage
ID Continuous Drain Current
TC=25℃ TC=100℃
IDM Pulsed Drain Current at VGS=10V
Limited by TJmax
PD Maximum Power Dissipation
EAS Single Pulse Avalanche Energy
VDD=50V,L=1m H
Values 100 ±20 668 470 940 1071 3000
THERMAL AND MODULE CHARACTERISTICS (T C =25°C...
