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May 2016
MMN668A010U1
100V 668A N-ch Power MOSFET Module
Preliminary
RoHS Compliant
PRODUCT FEATURES
□ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω
APPLICATIONS
□ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter
Type MMN668A010U1
VDS 100V
ID 668A
RDS(ON).max TJ=25℃ 1.
MMN668A010U1 Datasheet
