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MMN600DB015B - MOSFET

Key Features

  • RDS(ON). typ=1.8mΩ@VGS=10V.
  • 175℃ junction temperature.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery body Diode.
  • 20K Ω Gate Protected Resistance Inside.

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Datasheet Details

Part number MMN600DB015B
Manufacturer MacMic
File Size 307.30 KB
Description MOSFET
Datasheet download datasheet MMN600DB015B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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April 2015 MMN600DB015B 150V 600A N-ch Power MOSFET Module Version 0 RoHS Compliant PRODUCT FEATURES □ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter Type MMN600DB015B VDS 150V ID 600A RDS(ON).max TJ=25°C 2.