MMN668A010U1 mosfet equivalent, 100v 668a n-ch power mosfet.
□ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ In.
□ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter
Type MMN668A010U1
VDS 100V
ID 668A
RDS(ON).max T.
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