BUZ901 Datasheet | Magna

- HIGH SPEED SWITCHING - N- CHANNEL POWER MOSFET - SEMEFAB DESIGNED AND DIFFUSED - HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 - HIGH ENERGY RATING - ENHANCEMENT MODE - INTEGRAL PROTECTION DIODE Case - Source - P- CHANNEL ALSO AVAILABLE AS BUZ905 & BUZ906 TO- 3 Pin 1 - Gate Pin 2 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain - Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction - Case @ Tcase = 25°C BUZ900 160V ±14V 8A 8A 125W - 55 to 150°C 150°C 1°C/W BUZ901 200V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA .. Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)- Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Gate - Source Cut- Off Voltage Drain - Source Saturation Voltage BUZ900 BUZ901 STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions VGS = - 10V ID = 10m A VDS = 0 VDS = 10V VGD = 0 BUZ900 BUZ901 IG = ±100µA ID = 100m A ID = 8A VDS = 160V IDSX Drain - Source Cut- Off Current VGS = - 10V BUZ900 VDS = 200V BUZ901 yfs- Forward Transfer Admittance VDS = 10V ID = 3A...