Datasheet4U Logo Datasheet4U.com

BUZ901D - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

  • Drain Current: ID= 16A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 200V(Min).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – BUZ901D

Datasheet Details

Part number BUZ901D
Manufacturer INCHANGE
File Size 228.04 KB
Description N-Channel MOSFET
Datasheet download datasheet BUZ901D Datasheet
Additional preview pages of the BUZ901D datasheet.

📁 Similar Datasheet

  • BUZ901DP - (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET (ETC)
  • BUZ901 - (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET (Magna)
  • BUZ901P - N-CHANNEL POWER MOSFET (Magna)
  • BUZ901X4S - N-Channel Power MOSFET (ETC)
  • BUZ90 - Power Transistor (Siemens Semiconductor Group)
  • BUZ900 - (BUZ900 / BUZ901) N-CHANNEL POWER MOSFET (Magna)
  • BUZ900DP - (BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET (ETC)
  • BUZ900P - N-CHANNEL POWER MOSFET (Magna)
  • BUZ900X4S - N-Channel Power MOSFET (ETC)
  • BUZ902 - N-Channel MOSFET (Magna Tec)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current: ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 200 V ±20 V 16 A 48 A 250 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
Published: |