Part BUZ901D
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 228.04 KB
Inchange Semiconductor

BUZ901D Overview

Description

Designed for use in switch mode power supplies and general purpose applications. SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Key Features

  • Drain Current: ID= 16A@ TC=25℃
  • Drain Source Voltage- : VDSS= 200V(Min)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation