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BUZ90 - N-Channel MOSFET

Datasheet Summary

Features

  • High speed switching.
  • Low RDS(ON).
  • Easy driver for cost effective.

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Datasheet preview – BUZ90

Datasheet Details

Part number BUZ90
Manufacturer INCHANGE
File Size 224.79 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor BUZ90 ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=28℃ 4.5 A IDM Drain Current-Single Plused 18 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
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