BUZ90 Datasheet | Siemens Semiconductor Group

BUZ 90 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 600 V 4.5 A RDS(on) 1.6 Ω Package TO-220 AB Ordering Code C67078-S1321-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A ID IDpuls TC = 28 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4.5 8 mJ ID = 4.5 A, VDD = 50 V, RGS = 25 Ω L = 29 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal...