BUZ91 Datasheet | Siemens Semiconductor Group

BUZ 91 Not for new design SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 91 600 V 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ordering Code C67078-S1342-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls TC = 32 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 8 13 m J ID = 8 A, VDD = 50 V, RGS = 25 Ω L = 16.3 m H, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg Rth JC Rth JA -55 ... + 150 -55 ... + 150 ≤ 0.83 75 E 55 / 150 / 56 °C...