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60R900P - MMD60R900P

Description

MMD60R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Features

  • Low Power Loss by High Speed Switching and Low On-Resistance.
  • 100% Avalanche Tested.
  • Green Package.
  • Pb Free Plating, Halogen Free.

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Datasheet preview – 60R900P

Datasheet Details

Part number 60R900P
Manufacturer MagnaChip
File Size 1.08 MB
Description MMD60R900P
Datasheet download datasheet 60R900P Datasheet
Additional preview pages of the 60R900P datasheet.

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Full PDF Text Transcription

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MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.9 3 4.5 12.
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