n-channel mosfet.
- VDS = 20 V - ID = 9 A - Drain-Source ON Resistance;
RDS(ON) < 9.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 4.0V RDS (ON) < 10.5mΩ @ VGS = 3.5V RDS (ON) < 11.5mΩ @ VGS = 3..
- Portable Battery Protection Module
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Note 1
Drain-Source V.
The MDA0336E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 20 V - ID = 9 A - Drain-Source ON Resistance;
RDS(ON) < 9.5mΩ @ VGS .
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