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MDA0336E - N-Channel MOSFET

General Description

The MDA0336E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Key Features

  • - VDS = 20 V - ID = 9 A - Drain-Source ON Resistance; RDS(ON) < 9.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 4.0V RDS (ON) < 10.5mΩ @ VGS = 3.5V RDS (ON) < 11.5mΩ @ VGS = 3.1V - ESD Protection = HBM CLASS 2.

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Datasheet Details

Part number MDA0336E
Manufacturer MagnaChip
File Size 637.28 KB
Description N-Channel MOSFET
Datasheet download datasheet MDA0336E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDA0336E– Common-Drain Dual N-Channel Trench MOSFET 20V MDA0336E Common-Drain N-Channel Trench MOSFET 30V, 9A, 9.5mΩ General Description The MDA0336E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Features - VDS = 20 V - ID = 9 A - Drain-Source ON Resistance; RDS(ON) < 9.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 4.0V RDS (ON) < 10.5mΩ @ VGS = 3.5V RDS (ON) < 11.5mΩ @ VGS = 3.