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MDF18N50 Datasheet Preview

MDF18N50 Datasheet

N-Channel MOSFET

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MDF18N50
N-Channel MOSFET 500V, 18 A, 0.27
General Description
The MDF18N50 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF18N50 is suitable device for SMPS, high speed switching
and general purpose applications.
Features
VDS = 500V
VDS = 550V
ID = 18A
RDS(ON) ≤ 0.27
Applications
@ Tjmax
@VGS = 10V
@VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
D
G DS
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Characteristics
Continuous Drain Current ()
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
Id limited by maximum junction temperature
G
S
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
550
±30
18
11
72
37
0.29
4.5
950
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec 2009. Version 1.4
1
Symbol
RθJA
RθJC
Rating
62.5
3.4
Unit
oC/W
MagnaChip Semiconductor Ltd.




MagnaChip

MDF18N50 Datasheet Preview

MDF18N50 Datasheet

N-Channel MOSFET

No Preview Available !

Ordering Information
Part Number
MDF18N50TH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 9.0A
VDS = 40V, ID = 9.0A
VDS = 400V, ID = 18.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 250V, ID = 18.0A,
RG = 25Ω(3)
IS = 18.0A, VGS = 0V
IF = 18.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 18.0A, di/dt200A/us, VDD<BVDSS, Rg =25Ω, Starting TJ=25°C
4. L=5.3mH, IAS=18.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min Typ Max Unit
500 -
3.0 -
-
V
5.0
- - 1 µA
- - 100 nA
0.22 0.27
- 13 - S
- 48 -
- 12 - nC
- 15 -
- 2430
- 10
pF
- 302
- 58
- 74
- 110
ns
- 44
- 18 - A
- 1.4 V
- 375
ns
- 4.2
µC
Dec 2009. Version 1.4
2 MagnaChip Semiconductor Ltd.


Part Number MDF18N50
Description N-Channel MOSFET
Maker MagnaChip
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MDF18N50 Datasheet PDF






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