MDH3331 mosfet equivalent, p-channel trench mosfet.
à VDS = -20V à ID = -3.5 @ VGS = -10V à RDS(ON)
<75mΩ @ VGS = -4.5V <105mΩ @ VGS = -2.5V
Applications
à PWM à Load Switch à General Purpose
D
G
S
Absolute Maximum Rating.
à PWM à Load Switch à General Purpose
D
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Characteristics.
The MDH3331 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.
G S
SOT-23
D.
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