Description
The MDS1525 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V ID = 16.9A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.9mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
5(D) 6(D) 7(D) 8(D)
4(G)
3(S) 2(S) 1(S)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characteristics
Characteristics.
MDS1525-MagnaChip.pdf
