Datasheet Details
| Part number | MDS1903 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.07 MB |
| Description | Single N-channel MOSFET |
| Datasheet |
 MDS1903 Datasheet
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General Description
The MDS1903 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDS1903 is suitable device for DC to DC converter and general purpose applications.
Key Features
- VDS = 100V ID = 3.3A @VGS = 10V RDS(ON) (MAX) < 110mΩ @VGS = 10V < 120mΩ @VGS = 6.0V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction.