Description
The MDV1545 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- VDS = 30V ID = 32A @VGS = 10V RDS(ON)
< 10.1 mΩ @VGS = 10V < 14.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=25oC TC=70oC TA=25oC TA=70oC
TC=25oC TC=7.
MDV1545-MagnaChip.pdf
