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MDV1522 - N-Channel Trench MOSFET

Description

The MDV1522 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1522 is suitable for DC/DC converter and general purpose applications.

Features

  •  VDS = 30V  ID = 28A @VGS = 10V  RDS(ON) < 4.9mΩ @VGS = 10V < 6.8mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested D DD DD DD DD S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA.

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Datasheet preview – MDV1522

Datasheet Details

Part number MDV1522
Manufacturer MagnaChip
File Size 1.08 MB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDV1522 Datasheet
Additional preview pages of the MDV1522 datasheet.

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Full PDF Text Transcription

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MDV1522 – Single N-Channel Trench MOSFET 30V MDV1522 Single N-channel Trench MOSFET 30V, 28A, 4.9mΩ General Description The MDV1522 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1522 is suitable for DC/DC converter and general purpose applications. Features  VDS = 30V  ID = 28A @VGS = 10V  RDS(ON) < 4.9mΩ @VGS = 10V < 6.8mΩ @VGS = 4.
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