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MDV1526 - N-Channel Trench MOSFET

Description

The MDV1526 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDV1526 is suitable for DC/DC converter and general purpose applications.

Features

  • VDS = 30V ID = 20A @VGS = 10V RDS(ON) < 11.0mΩ @VGS = 10V < 16.4mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested DD DD DD DD D S SSG GS SS PDFN33 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC T.

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Datasheet preview – MDV1526

Datasheet Details

Part number MDV1526
Manufacturer MagnaChip
File Size 853.47 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDV1526 Datasheet
Additional preview pages of the MDV1526 datasheet.

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Full PDF Text Transcription

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MDV1526 – Single N-Channel Trench MOSFET 30V MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mΩ General Description The MDV1526 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1526 is suitable for DC/DC converter and general purpose applications. Features VDS = 30V ID = 20A @VGS = 10V RDS(ON) < 11.0mΩ @VGS = 10V < 16.4mΩ @VGS = 4.
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