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MMD60R900P - N-channel MOSFET

General Description

MMD60R900P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Key Features

  • Low Power Loss by High Speed Switching and Low On-Resistance.
  • 100% Avalanche Tested.
  • Green Package.
  • Pb Free Plating, Halogen Free.

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Datasheet Details

Part number MMD60R900P
Manufacturer MagnaChip
File Size 757.45 KB
Description N-channel MOSFET
Datasheet download datasheet MMD60R900P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.9 3 4.