Datasheet4U Logo Datasheet4U.com

MMD60R900QRH - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 4.4A@ TC=25℃.
  • Drain Source Voltage : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMD60R900Q N-channel MOSFET MagnaChip
MMD60R900P N-channel MOSFET MagnaChip
MMD60R1K0RFZ N-Channel MOSFET MagnaChip
MMD60R280RZ N-channel MOSFET MagnaChip
MMD60R300Q N-channel MOSFET MagnaChip

Other Datasheets by Inchange Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor MMD60R900QRH FEATURES ·Drain Current : ID= 4.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4.4 A IDM Drain Current-Single Pluse 13.2 A PD Total Dissipation @TC=25℃ 37 W TJ Max.