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BCU83D - NPN Epitaxial Planar Silicon Transistor

Key Features

  • LOW VCE(SAT) 2 .4 4 3 2 1 0 .4 0 .8 2 .4 0 .8 2 .4 1 .0 0 .4 1 .8.
  • HIGH.

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Datasheet Details

Part number BCU83D
Manufacturer Magnatec
File Size 135.49 KB
Description NPN Epitaxial Planar Silicon Transistor
Datasheet download datasheet BCU83D Datasheet

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www.DataSheet4U.com BCU83D MECHANICAL DATA Dimensions in mm 6 .2 5 .0 1 .5 1 .5 1 .0 0 .5 0 .7 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal For High current Switching Application 5 6 4 .2 5 .9 FEATURES • LOW VCE(SAT) 2 .4 4 3 2 1 0 .4 0 .8 2 .4 0 .8 2 .4 1 .0 0 .4 1 .8 • HIGH CURRENT CAPACITY • FAST SWITCHING SPEED 1 : 2 : 3 : 4 : 5 : 6 : B a s e 1 E m itte r E m itte r B a s e 2 C o lle c to C o lle c to 1 2 r 2 r 1 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICP IB PC PT Collector – Base voltage Collector – Emitter voltage (IB = 0) Emitter – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (750mm2 x 0.8mm) Total Dissipation (Mounted on Ceramic Board (750mm2 x 0.