Magnatec BCU83
NPN Epitaxial Planar Silicon Transistor
MECHANICAL DATA
Dimensions in mm 6 .0 5 .0 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal for high current driver applications requiring efficient low loss devices 8 .5 3 .0 1 4 .0FEATURES
● LOW VCE(SAT)● HIGH CURRENT
● HIGH ENERGY RATING 1 .4 5 P IT C H 0 .5 T Y P
APPLICATIONS
4 .7 E C B 0 .5● Any High Current Driver
APPLICATIONS
Requiring Efficient Low Loss Devices. TO92(EXTENDED)ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) Ptot Tstg Tj Collector – Base voltage Collector – Emitter voltage Emitter – Base voltage Collector current Peak Collector current Total Dissipation at Tcase = 25°C Storage Temperature 60V 20V 6V 5A 8A 0.9W –55 to 150°C 150°C Maximum Operating Junction Temperature Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: Prelim 6/99 BCU83ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated) Parameter ICBO IEBO VCE(sat)* VBE(sat)* hFE* fT Cob Collector Cut–Off Cur...