Magnatec BCU83D
NPN Epitaxial Planar Silicon Transistor
MECHANICAL DATA
Dimensions in mm 6 .2 5 .0 1 .5 1 .5 1 .0 0 .5 0 .7 NPN EPITAXIAL PLANAR SILICON TRANSISTOR Ideal For High current Switching Application 5 6 4 .2 5 .9FEATURES
● LOW VCE(SAT) 2 .4 4 3 2 1 0 .4 0 .8 2 .4 0 .8 2 .4 1 .0 0 .4 1 .8● HIGH CURRENT CAPACITY
● FAST SWITCHING SPEED 1 : 2 : 3 : 4 : 5 : 6 : B a s e 1 E m itte r E m itte r B a s e 2 C o lle c to C o lle c to 1 2 r 2 r 1
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICP IB PC PT Collector – Base voltage Collector – Emitter voltage (IB = 0) Emitter – Base voltage Collector current Collector Current (Pulse) Collector Dissipation (Mounted on Ceramic Board (750mm2 x 0.8mm) Total Dissipation (Mounted on Ceramic Board (750mm2 x 0.8mm) 60V 20V 6V 5A 8A 1A 1.5W 2W 150°C –55 to 150°C Prelim.6/99 Tj Junction Temperature Tstg Storage Temperature Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: magnatec@semelab.co.uk Website: w w w . D a t a S h e e t 4 U . c o m BCU83D...