SLB10N65S Datasheet - Maple Semiconductor

N-Channel MOSFET

SLB10N65S Features

* - 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB10N65S SLI10N65S

SLB10N65S General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLB10N65S Datasheet (642.35 KB)

SLB10N65S Datasheet Preview — Preview of SLB10N65S PDF

Datasheet Details

Part number:

SLB10N65S

Manufacturer:

Maple Semiconductor

File Size:

642.35 KB

Description:

N-channel mosfet.

📁 Related Datasheet

SLB10N65C N-Channel MOSFET (Maple Semiconductor)

SLB10N60C N-Channel MOSFET (Maple Semiconductor)

SLB120N08G3 85V N-Channel MOSFET (Msemitek)

SLB128B Transmitter (National Semiconductor)

SLB12N65C N-Channel MOSFET (Maple Semiconductor)

SLB1370 Miniature Slide Switches (Apem Components)

SLB13N50C N-Channel MOSFET (Maple Semiconductor)

SLB14N50C 500V N-Channel MOSFET (Maple Semiconductor)

SLB150N06T 60V N-Channel MOSFET (Msemitek)

SLB160N10G3 100V N-Channel MOSFET (Msemitek)

TAGS

SLB10N65S N-Channel MOSFET Maple Semiconductor

Image Gallery

SLB10N65S Features

SLB10N65S General Description

Datasheet Details

File Size:

Description:

SLB10N65S Distributor