SLB13N50C - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLB13N50C
Manufacturer	Maple Semiconductor
File Size	0.96 MB
Description	N-Channel MOSFET
Datasheet	SLB13N50C Datasheet
Additional preview pages of the SLB13N50C datasheet.

Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 13A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 45nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB13N50C / SLI13N50C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1.

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Published: Apr 11, 2017 |