SLB13N50C Datasheet | Maple Semiconductor

SLB13N50C / SLI13N50C SLB13N50C / SLI13N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 13A, 500V, RDS(on) = 0.48Ω@VGS = 10 V - Low gate charge ( typical 45n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D2-PAK...