SLB10N65S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Part number	SLB10N65S
Manufacturer	Maple Semiconductor
File Size	642.35 KB
Description	N-Channel MOSFET
Datasheet	SLB10N65S Datasheet
Additional preview pages of the SLB10N65S datasheet.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 10A, 650V, RDS(on) typ. =0.8Ω@VGS = 10 V - Low gate charge ( typical 28.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB10N65S SLI10N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note.

📁 Similar Datasheet

Other Datasheets by Maple Semiconductor

Published: Dec 28, 2018 |