SLD50R550SJ Key Features
- 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V
- Low gate charge ( typical 25nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: SLD50R550SJ
- Manufacturer: Maple Semiconductor
- Size: 632.79 KB
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|---|---|
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SLD50R550SJ Description
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.