SLD50R550SJ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLD50R550SJ
Manufacturer	Maple Semiconductor
File Size	632.79 KB
Description	N-Channel MOSFET
Datasheet	SLD50R550SJ Datasheet

General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency.

Overview

SLD50R550SJ/SLU50R550SJ SLD50R550SJ/SLU50R550SJ 500V N-Channel MOSFET CB-FET.

Key Features

- 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD50R550SJ/SLU50R550SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage.

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