SLD50R550SJ Datasheet - Maple Semiconductor

N-Channel MOSFET

SLD50R550SJ Features

* - 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD50R550SJ/SLU50R550S

SLD50R550SJ General Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wel.

SLD50R550SJ Datasheet (632.79 KB)

SLD50R550SJ Datasheet Preview — Preview of SLD50R550SJ PDF

Datasheet Details

Part number:

SLD50R550SJ

Manufacturer:

Maple Semiconductor

File Size:

632.79 KB

Description:

N-channel mosfet.

📁 Related Datasheet

SLD50R290SJ N-Channel MOSFET (Maple Semiconductor)

SLD51-018 TVS Diodes (Littelfuse)

SLD51U-017 TVS Diodes (Littelfuse)

SLD54-018 TVS Diodes (Littelfuse)

SLD54A 6000Watt Transient Voltage Suppressors (MCC)

SLD54CA 6000Watt Transient Voltage Suppressors (MCC)

SLD54U-017 TVS Diodes (Littelfuse)

SLD58-018 TVS Diodes (Littelfuse)

SLD58A 6000Watt Transient Voltage Suppressors (MCC)

SLD58CA 6000Watt Transient Voltage Suppressors (MCC)

TAGS

SLD50R550SJ N-Channel MOSFET Maple Semiconductor

Image Gallery

SLD50R550SJ Features

SLD50R550SJ General Description

Datasheet Details

File Size:

Description:

SLD50R550SJ Distributor