SLD5N50S Datasheet N-Channel MOSFET

Manufacturer: Maple Semiconductor

SLD5N50S n-channel mosfet by Maple Semiconductor - Datasheet Preview

Datasheet Details

Part number	SLD5N50S
Manufacturer	Maple Semiconductor
File Size	0.96 MB
Description	N-Channel MOSFET
Download	SLD5N50S Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLU5N50S / SLD5N50S SLU5N50S / SLD5N50S 650V N-Channel MOSFET.

Key Features

- 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D TO-252 TO-251 G GS GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLU5N50S SLD5N50S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1).

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