SLD8N60U Datasheet N-Channel MOSFET

Manufacturer: Maple Semiconductor

SLD8N60U n-channel mosfet by Maple Semiconductor - Datasheet Preview

Datasheet Details

Part number	SLD8N60U
Manufacturer	Maple Semiconductor
File Size	325.26 KB
Description	N-Channel MOSFET
Download	SLD8N60U Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLD8N60U / SLU8N60U SLD8N60U / SLU8N60U 600V N-Channel MOSFET.

Key Features

- 7.5A, 600V, RDS(on) = 1.3Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Singl.

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