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SLD8N65U - N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 7.5A, 650V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.

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Datasheet Details

Part number SLD8N65U
Manufacturer Maple Semiconductor
File Size 790.30 KB
Description N-Channel MOSFET
Datasheet download datasheet SLD8N65U Datasheet
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SLD8N65U / SLU8N65U SLD8N65U / SLU8N65U 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 7.5A, 650V, RDS(on) = 1.
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