SLD8N60U Datasheet | Maple Semiconductor

SLD8N60U / SLU8N60U SLD8N60U / SLU8N60U 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 7.5A, 600V, RDS(on) = 1.3Ω@VGS = 10 V - Low gate charge ( typical 32n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D-PAK I-PAK...