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SLF4N60C - N-Channel MOSFET

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Datasheet Details

Part number SLF4N60C
Manufacturer Maple Semiconductor
File Size 299.91 KB
Description N-Channel MOSFET
Datasheet download datasheet SLF4N60C Datasheet

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLP4N60C / SLF4N60C SLP4N60C / SLF4N60C 600V N-Channel MOSFET General.

Key Features

  • - 4.5A, 600V, RDS(on)typ. = 2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N60C SLF4N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gat.

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