SLF60R080SS Datasheet | Maple Semiconductor

Description This Power MOSFET is produc Feeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has--b7L.oe6w Ae,gn5a0tee0Vsch,pa Rer Dgc Se(oi(na)ttylylppy.i=cat0al.5i2lΩo5@nr Ce V)d GS = 10 V to minimize conduction loss, pr-o Hvigihdreugsguedpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the avalanche and mutation m--o I1md0p0er%o.vaevdadlavn/dcht ecatpeastbeildity These devices are well suited for AC/DC power conversion GD S TO-220F SLF60R080SS 600V N-Channel MOSFET Features - 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source...