SLF60R190SS Datasheet | Maple Semiconductor

General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has--bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the - 100% avalanche tested avalanche and mutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion TO-220F SLF60R190SS 600V N-Channel MOSFET Features - 22A, 600V, RDS(on) typ.= 150mΩ@VGS =10 V - Low gate charge ( typical 42nC) - High ruggedness - Fast switching - 100%...