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SLF60R190SS - N-Channel MOSFET

General Description

Advanced Super-Junction technology.

Key Features

  • - 22A, 600V, RDS(on) typ. = 150mΩ@VGS =10 V - Low gate charge ( typical 42nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Sin.

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Datasheet Details

Part number SLF60R190SS
Manufacturer Maple Semiconductor
File Size 681.08 KB
Description N-Channel MOSFET
Datasheet download datasheet SLF60R190SS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLF60R190SS General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has--bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsgeudpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the - 100% avalanche tested avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion GDS TO-220F SLF60R190SS 600V N-Channel MOSFET Features - 22A, 600V, RDS(on) typ.