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SLF60R080SS - 600V N-Channel MOSFET

General Description

Advanced Super-Junction technology.

Key Features

  • - 47A, 600V, RDS(on) typ. = 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single.

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Datasheet Details

Part number SLF60R080SS
Manufacturer Maple Semiconductor
File Size 515.37 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SLF60R080SS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SLF60R080SS General Description This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has--b7L.oe6wAe,gn5a0tee0Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al.5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the avalanche and commutation m--oI1md0p0er%o.vaevdadlavn/dcht ecatpeastbeildity These devices are well suited for AC/DC power conversion GD S TO-220F SLF60R080SS 600V N-Channel MOSFET Features - 47A, 600V, RDS(on) typ.