SLI7N80C Datasheet - Maple Semiconductor

800V N-Channel MOSFET

SLI7N80C Features

* - 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLB7N80C SLI7N80C VDSS ID

SLI7N80C General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLI7N80C Datasheet (330.12 KB)

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Datasheet Details

Part number:

SLI7N80C

Manufacturer:

Maple Semiconductor

File Size:

330.12 KB

Description:

800v n-channel mosfet.

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SLI7N80C 800V N-Channel MOSFET Maple Semiconductor

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SLI7N80C Features

SLI7N80C General Description

Datasheet Details

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Description:

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