Datasheet4U Logo Datasheet4U.com

SLP10N60C - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 10A, 600V, RDS(on)typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 36.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N60C SLF10N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Not.

📥 Download Datasheet

Datasheet Details

Part number SLP10N60C
Manufacturer Maple Semiconductor
File Size 1.18 MB
Description N-Channel MOSFET
Datasheet download datasheet SLP10N60C Datasheet

📁 Similar Datasheet

Other Datasheets by Maple Semiconductor

Full PDF Text Transcription

Click to expand full text
SLP10N60C / SLF10N60C SLP10N60C / SLF10N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 10A, 600V, RDS(on)typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 36.
Published: |