SLP10N60U Datasheet N-Channel MOSFET

Manufacturer: Maple Semiconductor

SLP10N60U n-channel mosfet by Maple Semiconductor - Datasheet Preview

Datasheet Details

Part number	SLP10N60U
Manufacturer	Maple Semiconductor
File Size	344.79 KB
Description	N-Channel MOSFET
Download	SLP10N60U Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLP10N60U / SLF10N60U SLP10N60U / SLF10N60U 600V N-Channel MOSFET General.

Key Features

- 10A, 600V, RDS(on) typ. = 0.68Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP10N60U SLF10N60U VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.

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