SLP12N65S - N-Channel MOSFET

Product Overview

Maple Semiconductor

Datasheet Details

Part number	SLP12N65S
Manufacturer	Maple Semiconductor
File Size	345.50 KB
Description	N-Channel MOSFET
Datasheet	SLP12N65S Datasheet
Additional preview pages of the SLP12N65S datasheet.

SLP12N65S Product details

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

- 12A, 650V, RDS(on) typ. = 0.62Ω@VGS = 10 V - Low gate charge ( typical 35 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N65S SLF12N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single.

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Published: Dec 28, 2018 |