SLU6N70U Datasheet N-Channel MOSFET

Manufacturer: Maple Semiconductor

SLU6N70U n-channel mosfet by Maple Semiconductor - Datasheet Preview

Datasheet Details

Part number	SLU6N70U
Manufacturer	Maple Semiconductor
File Size	293.03 KB
Description	N-Channel MOSFET
Download	SLU6N70U Download (PDF)

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Overview

SLD6N70U / SLU6N70U SLD6N70U/SLU6N70U 700V N-Channel MOSFET General.

Key Features

- 4.8A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Si.

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