SLU65R2K6SJ Overview
Description
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V
- Low gate charge ( typical 7nC)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D D GS D-PAK GDS I-PAK G S
