Datasheet4U Logo Datasheet4U.com

ME100N15T-G - N-Channel MOSFET

Description

The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦13.6mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME100N15T-G

Datasheet Details

Part number ME100N15T-G
Manufacturer Matsuki
File Size 694.87 KB
Description N-Channel MOSFET
Datasheet download datasheet ME100N15T-G Datasheet
Additional preview pages of the ME100N15T-G datasheet.

📁 Similar Datasheet

  • ME1117 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A12 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A18 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A25 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A33 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117A50 - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME1117F - 1.0A Adjustable Voltage High Speed LDO Regulators (Microne)
  • ME12629B-R - BLUE SIDE BACKLIGHT (Micro Electronics)
  • ME1502 - 5V USB High-Side Adjustable Door Limit Current Load Switch (ChipSourceTek)
  • ME15N10 - N-Channel MOSFET (VBsemi)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
N-Channel 150-V (D-S) MOSFET GENERAL DESCRIPTION The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (TO-220) Top View ME100N15T-G FEATURES ● RDS(ON)≦13.
Published: |