ME100N15T-G mosfet equivalent, n-channel mosfet.
* RDS(ON)≦13.6mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
APPLICATIONS.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
* The Ordering I.
The ME100N15T-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are p.
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