ME1303S-G mosfet equivalent, p-channel 20v (d-s) mosfet.
* RDS(ON) ≦95mΩ@VGS=-4.5V
* RDS(ON) ≦120mΩ@VGS=-2.5V
* RDS(ON) ≦180mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exception.
* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC
PIN CONFIGURATION
(SOT-23) To.
The ME1303S is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
Image gallery
Download