ME1304AT3-G, ME1304AT3 Datasheet - Matsuki

ME1304AT3-G N-Channel 20V (D-S) MOSFET

The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME1304AT3-G Features

* RDS(ON) ≦ 65 mΩ @VGS=4.5V

* RDS(ON) ≦ 80 mΩ @VGS=2.5V

* RDS(ON) ≦ 95 mΩ @VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

ME1304AT3-Matsuki.pdf (1.43 MB)

ME1304AT3-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME1304AT3-G, ME1304AT3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME1304AT3-G, ME1304AT3

Manufacturer:

Matsuki

File Size:

1.43 MB

Description:

N-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME1304AT3-G, ME1304AT3.
Please refer to the document for exact specifications by model.

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ME1304AT3-G ME1304AT3 N-Channel 20V D-S MOSFET Matsuki

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