ME1304AT3-G Datasheet, Matsuki

* RDS(ON) ≦ 65 mΩ @VGS=4.5V
* RDS(ON) ≦ 80 mΩ @VGS=2.5V
* RDS(ON) ≦ 95 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Excep.

* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC Ordering Information: ME1304AT.

The ME1304AT3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.