ME13N10A-G, ME13N10A Datasheet - Matsuki

ME13N10A-G N-Channel 100V (D-S) MOSFET

The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

ME13N10A-G Features

* RDS(ON) ≦145mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch

* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View

* The Order

ME13N10A-Matsuki.pdf

ME13N10A-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME13N10A-G, ME13N10A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME13N10A-G, ME13N10A

Manufacturer:

Matsuki

File Size:

943.03 KB

Description:

N-channel 100v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME13N10A-G, ME13N10A.
Please refer to the document for exact specifications by model.

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ME13N10A-G ME13N10A N-Channel 100V D-S MOSFET Matsuki

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