ME16P10-G Datasheet, Matsuki

* RDS(ON)≦195mΩ@VGS=-10V
* RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especially tailored to
* Super high density cell design for extr.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-252-3L) Top .

The ME16P10 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench FEATURES
* RDS(ON)≦195mΩ@VGS=-10V
* RDS(ON)≦210mΩ@VGS=-4.5V technology. This high density process is especi.