ME20P03F-G Overview
The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
ME20P03F-G Key Features
- RDS(ON)≦31.5mΩ@VGS=-10V
- RDS(ON)≦44mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
ME20P03F-G Applications
- Power Management in Note book
