900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Matsuki

ME20P03F-G Datasheet Preview

ME20P03F-G Datasheet

P-Channel MOSFET

No Preview Available !

P-Channel 30V (D-S) MOSFET
ME20P03F/ME20P03F-G
GENERAL DESCRIPTION
The ME20P03F is the P-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application.
PIN CONFIGURATION
FEATURES
RDS(ON)31.5mΩ@VGS=-10V
RDS(ON)44mΩ@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
(TO-220F)
Top View
* TheOrdering Information: ME20P03F (Pb-free)
ME4
ME20P03F-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25Unless Otherwise Noted)
Parameter
Symbol
Maximum Ratings
Drain-Source Voltage
VDS -30
Gate-Source Voltage
Continuous Drain Current
TC=25
TC=70
VGS
ID
±20
-29.7
-24.9
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
IDM
PD
-119
40.3
28.2
Operating Junction Temperature
TJ -55 to 175
Thermal Resistance-Junction to Case*
RθJC
3.72
* The device mounted on 1in2 FR4 board with 2 oz copper.
Unit
V
V
A
A
W
/W
MJualr,,22001170-VeVr1e.r3sion 1.0
DCC
正式發行
01




Matsuki

ME20P03F-G Datasheet Preview

ME20P03F-G Datasheet

P-Channel MOSFET

No Preview Available !

ME20P03F/ME20P03F-G
P-Channel 30V (D-S) MOSFET
Electrical Characteristics (TC =25Unless Otherwise Specified)
Symbol
Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-30
-1
-3
IGSS Gate-Body Leakage
VDS=0V, VGS=±20V
±100
IDSS
Zero Gate Voltage Drain Current
VDS=-30, VGS=0V
-1
RDS(ON)
Drain-Source On-Resistance*
VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
26 31.5
34 44
VSD Diode Forward Voltage*
ISD=-18A, VGS=0V
-1.3
DYNAMIC
Qg Total Gate Charge
17.6
Qgs Gate-Source Charge
VDD=-25V, VGS=-4.5V, ID=-18A
7.3
Qgd Gate-Drain Charge
9.3
Ciss Input Capacitance
887
Coss
Output Capacitance
VDS=-25V, VGS=0V, f=1MHz
110
Crss
Reverse Transfer Capacitance
96.2
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=-15V, ID=-18A,
VGS =-10V, RG=3.3Ω,
RL=0.8Ω
34
17
51
10
Notes: a, pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nc
pF
ns
MJualr,,22001170-VeVr1e.r3sion 1.0
DCC
正式發行
02


Part Number ME20P03F-G
Description P-Channel MOSFET
Maker Matsuki
Total Page 5 Pages
PDF Download

ME20P03F-G Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 ME20P03F-G P-Channel MOSFET
Matsuki





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy