ME2304-G, ME2304 Datasheet - Matsuki

ME2304-G N-Channel Enhancement MOSFET

The ME2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2304-G Features

* RDS(ON) ≦117mΩ@VGS=10V

* RDS(ON) ≦190mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Loa

ME2304-Matsuki.pdf

ME2304-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2304-G, ME2304. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2304-G, ME2304

Manufacturer:

Matsuki

File Size:

1.35 MB

Description:

N-channel enhancement mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2304-G, ME2304.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME2304 N-Channel Enhancement MOSFET (Matsuki)

ME2301 P-Channel Enhancement Mode Mosfet (Matsuki)

ME2301-G P-Channel Enhancement Mode Mosfet (Matsuki)

ME2301A P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301A-G P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301D P-Channel MOSFET (VBsemi)

ME2301DC P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301DC-G P-Channel 20V (D-S) MOSFET (Matsuki)

TAGS

ME2304-G ME2304 N-Channel Enhancement MOSFET Matsuki

ME2304-G Distributor