Datasheet Details
| Part number | ME2305A |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.04 MB |
| Description | P-Channel 20V (D-S) MOSFET |
| Datasheet | ME2305A-Matsuki.pdf |
|
|
| Part number | ME2305A |
|---|---|
| Manufacturer | Matsuki |
| File Size | 1.04 MB |
| Description | P-Channel 20V (D-S) MOSFET |
| Datasheet | ME2305A-Matsuki.pdf |
|
|
|
The ME2305A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
ME2305 | P-Channel MOSFET | HAOHAI |
| Part Number | Description |
|---|---|
| ME2305A-G | P-Channel 20V (D-S) MOSFET |
| ME2305 | P-Channel 20V (D-S) MOSFET |
| ME2305-G | P-Channel 20V (D-S) MOSFET |
| ME2301 | P-Channel Enhancement Mode Mosfet |
| ME2301-G | P-Channel Enhancement Mode Mosfet |
| ME2301A | P-Channel 20V (D-S) MOSFET |
| ME2301A-G | P-Channel 20V (D-S) MOSFET |
| ME2301DC | P-Channel 20V (D-S) MOSFET |
| ME2301DC-G | P-Channel 20V (D-S) MOSFET |
| ME2301GC | P-Channel 20V (D-S) MOSFET |